In this project, we aim to study the epitaxy and characterization of N-polar ferroelectric ScAlN. We aim to demonstrate, for the first time, ferroelectric N-polar ScAlN by molecular beam epitaxy. ScAlN with Sc compositions up to 40-50% will be grown and characterized. We will further study the effect of substrate (including sapphire, SiC, free-standing GaN and the presence of any offcut, etc.) on the epitaxy and properties of ScAlN. We will perform a detailed investigation of the structural, electronic, and ferroelectric properties of N-polar ScAlN epilayers.
Funding: $30K (2022)
Goal: The desired outcome of this project is to demonstrate and improve ferroelectricity properties of N-polar ScAlN films grown by plasma-assisted molecular beam epitaxy.
Token Investors: Elaheh Ahmadi, Zetian Mi
Project ID: 1003